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KSP92 - P-channel enhancement mode vertical D-MOS transistor

Key Features

  • Low threshold voltage VGS(th) Direct interface to C-MOS, TTL,etc. High-speed switching No secondary breakdown. SOT-223 6.50+0.2 -0.2 3.00+0.1 -0.1 4 Unit: mm 3.50+0.2 -0.2 0.90+0.2 -0.2 7.00+0.3 -0.3 1 2 3 2.9 4.6 0.70+0.1 -0.1 1 gate 2,4 drain 3 source Absolute Maximum Ratings Ta = 25 Parameter drain-source voltage gate-source voltage (open drain) DC drain current peak drain current total power dissipation (up to Tamb = 25.
  • ) storage temperature range junction temperature from ju.

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Datasheet Details

Part number KSP92
Manufacturer Kexin Semiconductor
File Size 44.65 KB
Description P-channel enhancement mode vertical D-MOS transistor
Datasheet download datasheet KSP92 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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0.1max +0.05 0.90 -0.05 +0.15 1.65 -0.15 SMD Type TransistIoCrs P-channel enhancement mode vertical D-MOS transistor KSP92 Features Low threshold voltage VGS(th) Direct interface to C-MOS, TTL,etc. High-speed switching No secondary breakdown. SOT-223 6.50+0.2 -0.2 3.00+0.1 -0.1 4 Unit: mm 3.50+0.2 -0.2 0.90+0.2 -0.2 7.00+0.3 -0.3 1 2 3 2.9 4.6 0.70+0.1 -0.1 1 gate 2,4 drain 3 source Absolute Maximum Ratings Ta = 25 Parameter drain-source voltage gate-source voltage (open drain) DC drain current peak drain current total power dissipation (up to Tamb = 25 *) storage temperature range junction temperature from junction to ambient* Symbol -VDS VGSO -ID -IDM Ptot Tstg Tj Rth j-a Rating 240 20 180 720 1.5 -65 to 150 150 83.