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KSP230 - P-Channel Enhancement Mode Vertical D-MOS Transistor

Key Features

  • Direct interface to C-MOS,TTL,etc High-speed switching No secondary breakdown SOT-223 6.50+0.2 -0.2 3.00+0.1 -0.1 4 Unit: mm 3.50+0.2 -0.2 0.90+0.2 -0.2 7.00+0.3 -0.3 1 2 3 2.9 4.6 0.70+0.1 -0.1 1 gate 2,4 drain 3 source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-source voltage (DC) VDS -300 V Gate-source voltage (DC) open drain VGSO 20 V Drain current (DC) ID -210 mA Peak drain current IDM -0.75 A Total power dissipation.
  • Ptot 1.5.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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0.1max +0.05 0.90 -0.05 +0.15 1.65 -0.15 SMD Type Transistors P-Channel Enhancement Mode Vertical D-MOS Transistor KSP230 Features Direct interface to C-MOS,TTL,etc High-speed switching No secondary breakdown SOT-223 6.50+0.2 -0.2 3.00+0.1 -0.1 4 Unit: mm 3.50+0.2 -0.2 0.90+0.2 -0.2 7.00+0.3 -0.3 1 2 3 2.9 4.6 0.70+0.1 -0.1 1 gate 2,4 drain 3 source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-source voltage (DC) VDS -300 V Gate-source voltage (DC) open drain VGSO 20 V Drain current (DC) ID -210 mA Peak drain current IDM -0.75 A Total power dissipation * Ptot 1.5 W Storage temperature Tstg -65 to +150 Operating junction temperature Tj 150 thermal resistance from junction to ambient * Rth j-a 83.