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KTS1C1S250 - Mesh Overlay Power MOSFET

Features

  • Typical RDS(on) (N-Channel)=0.9 Typical RDS(on) (N-Channel)=2.1 Gate-source zener diode Standard outline for easy automated surface mount assembly Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k Gate-to-Source Voltage Continuous Drain Current, @ Tc = 25 Continuous Drain Current, @ Tc = 100 Pulsed Drain Current Total Dissipation at TC = 25 Total Dissipation at TC = 25 Single Operation Dual Operation TJ, TSTG Rthj-amb.
  • ) Symbol VDS VDG.

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Datasheet Details

Part number KTS1C1S250
Manufacturer Kexin
File Size 83.66 KB
Description Mesh Overlay Power MOSFET
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www.DataSheet4U.com SMD Type Mesh Overlay Power MOSFET KTS1C1S250 IC IC Features Typical RDS(on) (N-Channel)=0.9 Typical RDS(on) (N-Channel)=2.1 Gate-source zener diode Standard outline for easy automated surface mount assembly Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k Gate-to-Source Voltage Continuous Drain Current, @ Tc = 25 Continuous Drain Current, @ Tc = 100 Pulsed Drain Current Total Dissipation at TC = 25 Total Dissipation at TC = 25 Single Operation Dual Operation TJ, TSTG Rthj-amb * ) Symbol VDS VDGR VGS ID ID IDM PTOT 0.75 0.47 3 1.6 2 -65 to 150 62.5 78 /W N-Channel 250 250 25 0.60 0.38 2.
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