KVN4525E6 Datasheet | Kexin Semiconductor

Features High voltage Low on-resistance Fast switching speed Low gate drive Low threshold Unit: mm 1 pin mark Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate Source Voltage Continuous Drain Current (VGS=10V; TA=25 )- 1 (VGS=10V; TA=70 )- 1 Pulsed Drain Current - 3 Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Power Dissipation at TA=25 - 1 Linear Derating Factor Operating and Storage Temperature Range Junction to Ambient- 1 Junction to Ambient- 2 Symbol VDSS VGS ID ID IDM IS ISM Tj:Tstg R JA R JA Rating 250 40 230 183 1.1 1.44 1.1 8.8 -55 to +150 113 65 Unit V V m A m A A A A W m W/ /W /W - 1 For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions - 2 For a device surface mounted on FR4 PCB measured at t 5 secs. - 3 Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal .kexin..cn 1 SMD Type Transist Io Crs Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Drain-Source Breakdown Voltage V(BR)DSS ID=1m A, VGS=0V Zero Gate Voltage Drain Current IDSS VDS=250V, VGS=0V Gate-Body Leakage IGSS VGS= 40V, VDS=0V Gate-Source Threshold Voltage VGS(th) ID=1m A, VDS= VGS VGS=10V, ID=500m A Static Drain-Source On-State Resistance - 1 RDS(on) VGS=4.5V, ID=360m A VGS=2.4V, ID=20m...