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KVN4525E6 - 250V N-Channel Enhancement Mode MOSFET

Key Features

  • High voltage Low on-resistance Fast switching speed Low gate drive Low threshold Unit: mm 1 pin mark Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate Source Voltage Continuous Drain Current (VGS=10V; TA=25 ).
  • 1 (VGS=10V; TA=70 ).
  • 1 Pulsed Drain Current.
  • 3 Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Power Dissipation at TA=25.
  • 1 Linear Derating Factor Operating and Storage Temperature Range Junction to Ambient.
  • 1 Junction to Am.

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SMD Type TransistIoCrs 250V N-Channel Enhancement Mode MOSFET KVN4525E6 Features High voltage Low on-resistance Fast switching speed Low gate drive Low threshold Unit: mm 1 pin mark Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate Source Voltage Continuous Drain Current (VGS=10V; TA=25 )*1 (VGS=10V; TA=70 )*1 Pulsed Drain Current *3 Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Power Dissipation at TA=25 *1 Linear Derating Factor Operating and Storage Temperature Range Junction to Ambient*1 Junction to Ambient*2 Symbol VDSS VGS ID ID IDM IS ISM PD Tj:Tstg R JA R JA Rating 250 40 230 183 1.1 1.44 1.1 8.