KVN4525Z Datasheet | Kexin Semiconductor

Features High voltage Low on-resistance Fast switching speed Low gate drive Low threshold SOT89 package SOT-89 4.50+0.1 -0.1 1.80+0.1 -0.1 12 3 0.48+0.1 -0.1 0.53+0.1 -0.1 3.00+0.1 -0.1 +0.1 0.80 -0.1 +0.1 2.60 -0.1 +0.1 2.50 -0.1 +0.1 4.00 -0.1 +0.1 0.40 -0.1 Unit: mm 1.50+0.1 -0.1 0.44+0.1 -0.1 11.. SBoauserce 22.. DCroallienctor 33.. GEmatieitter Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate Source Voltage Continuous Drain Current (VGS=10V; TA=25 )- 1 (VGS=10V; TA=70 )- 1 Pulsed Drain Current - 3 Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Power Dissipation at TA=25 - 1 Linear Derating Factor Operating and Storage Temperature Range Junction to Ambient - 1 Junction to Ambient- 2 Symbol VDSS VGS ID ID IDM IS ISM Tj:Tstg R JA R JA Rating 250 40 240 192 1.44 1.1 1.44 1.2 9.6 -55 to +150 103 50 Unit V V m A m A A A A W m W/ /W /W - 1 For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions - 2 For a device surface mounted on FR4 PCB measured at t 5 secs. - 3 Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. .kexin..cn 1 SMD Type Transist Io Crs Electrical Characteristics Ta =...