KX5P02 Datasheet | Kexin Semiconductor

Features - VDS (V) =-20V - ID =-5 A (VGS =-10V) - RDS(ON) ＜ 50mΩ (VGS =-10V) - RDS(ON) ＜ 85mΩ (VGS =-4.5V) SOP-8 +0.04 0.21 -0.02 MOSFET 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Dr ain 8 Drain - Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Junction Temperature Junction Storage Temperature Range Symbol VDS VGS ID PD Rth JA TJ Tstg Rating -20 ±10 -5 2 62.5 150 -55 to 150 Unit V A W ℃/W ℃ - Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Maximum Body-Diode Continuous Current Diode Forward Voltage Symbol VDSS IDSS IGSS VGS(th) RDS(On) g FS IS VSD Test Conditions ID=-250μA, VGS=0V VDS=-18V, VGS=0V VDS=0V, VGS=±10V VDS=VGS , ID=-250μA VGS=-10V, ID=-5A VGS=-4.5V, ID=-4A VDS=-5V, ID=-5A IS=-1.3A,VGS=0V - Marking Marking 5P02 K- - - Min Typ Max Unit -20 -1 u A ±100 n A -0.4 -0.9 V 50 mΩ -1.3...