KX5P04DY Datasheet | Kexin Semiconductor

Features - VDS (V) =-40V - ID =-5.3 A (VGS =-10V) - RDS(ON) ＜ 80mΩ (VGS =-10V) - RDS(ON) ＜ 120mΩ (VGS =-4.5V) SOP-8 +0.040.21 -0.02 MOSFET Unit:mm 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain - Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Power Dissipation Junction Temperature Junction Storage Temperature Range Symbol VDS VGS ID PD TJ Tstg Rating -40 ±20 -5.3 2 150 -55 to 150 Unit V A W ℃ - Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage Symbol VDSS IDSS IGSS VGS(th) Static Drain-Source On-Resistance RDS(On) Test Conditions ID=-250μA, VGS=0V VDS=-40V, VGS=0V VDS=0V, VGS=±20V VDS=VGS ID=-250u A VGS=-10V, ID=-5A VGS=-4.5V, ID=-4A Min Typ Max Unit -40 V -1 u A ±100 n A -1 -3 V 80 mΩ - Marking Marking .kexin..cn 1 SMD Type - Typical Characterisitics P-Channel MOSFET KX5P04DY MOSFET 2 .kexin..cn SMD Type - Typical Characterisitics...