KX6N70 Description
DIP Type N-Channel Enhancement MOSFET KX6N70 MOSFET.
KX6N70 Key Features
- VDS (V) = 700V
- ID = 6.0A (VGS = 10V)
- RDS(ON) ＜ 1.8Ω (VGS = 10V)
- Low gate charge ( typical 16nC)
- Part: KX6N70
- Manufacturer: Kexin Semiconductor
- Size: 2.88 MB
Related Kexin Semiconductor Datasheets
| Part Number | Description |
|---|---|
| KX6N70F | N-Channel Enhancement MOSFET |
| KX6N80F | N-Channel MOSFET |