KX6N70
KX6N70 is N-Channel Enhancement MOSFET manufactured by Kexin Semiconductor.
Features
- VDS (V) = 700V
- ID = 6.0A (VGS = 10V)
- RDS(ON) ＜ 1.8Ω (VGS = 10V)
- Low gate charge ( typical 16n C)
TO-220
9.90 ±0.20 (8.70)
ø3.60 ±0.10
4.50 ±0.20
+0.10
- 0.05
2.80 ±0.10
(1.70) 1.30 ±0.10
(3.00) (3.70) 15.90 ±0.20 18.95MAX.
9.20 ±0.20 (1.46)
(45 )
10.08 ±0.30
13.08 ±0.20 (1.00)
1.27 ±0.10
1.52 ±0.10
2.54TYP [2.54 ±0.20 ]
0.80 ±0.10
2.54TYP [2.54 ±0.20 ]
10.00 0.20
+0.10
- 0.05
2.40 ±0.20
1 GATE 2 DRAIN 3 SOURCE
- Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Tc=25℃...
