KX6N70F
KX6N70F is N-Channel Enhancement MOSFET manufactured by Kexin Semiconductor.
Features
- VDS (V) = 700V
- ID = 6.0A (VGS = 10V)
- RDS(ON) ＜ 1.8Ω (VGS = 10V)
- Low gate charge ( typical 16n C)
15.87 ±0.20 3.30 ±0.20
TO-220F
±0.20
3.18 ±0.20 φ
±0.20
2.54 ±0.20
Unit: mm 0.70 ±0.20
6.68 ±0.20
12.42 ±0.20
1.47max
2.54typ 2.54typ
2.76 ±0.20
9.75 ±0.20
0.80 ±0.20
0.50 ±0.20
- Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Tc=25℃ Tc=100℃
Pulsed Drain Current (Note.1)
Avalanche Current
(Note.1)
Repetitive Avalanche Energy (Note.1)
Single Pulsed Avalanche Energy (Note.2)
Power Dissipation
Tc=25℃ Derate above 25℃
Peak Diode Recovery dv/dt
(Note.3)
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Case
Maximum lead Temperature for soldering purpose,
1/8 from case for 5 seconds
Junction...
