KX6N80F
KX6N80F is N-Channel MOSFET manufactured by Kexin Semiconductor.
Features
- VDS (V) = 800V
- ID = 7 A (VGS = 10V)
- RDS(ON) ＜ 1.9Ω (VGS = 10V)
- Low Gate Charge (Typ. 27 n C)
- Fast switching
- 100% Avalanche Tested
15.87 ±0.20 3.30 ±0.20
TO-220F
±0.20
3.18±0.20 φ
±0.20
2.54 ±0.20
Unit: mm 0.70 ±0.20
6.68 ±0.20
12.42 ±0.20
1.47max
2.54typ 2.54typ
2.76 ±0.20
9.75 ±0.20
0.80 ±0.20
0.50 ±0.20
- Absolute Maximum Ratings Ta = 25℃
Parameter Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Tc=25℃ Tc=100℃
Pulsed Drain Current
(Note.1)
Power Dissipation
- Derate above 25°C
Tc=25℃
Single Pulsed Avalanche Energy (Note.2)
Repetitive Avalanche Energy (Note.1)
Peak Diode Recovery dv/dt
(Note.3)
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Case
Junction...
