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MMBT5550 - High Voltage Transistors

Key Features

  • NPN Silicon High Voltage Transistors MMBT5550 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 +0.12.4 -0.1 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current -continuous Total device dissipation FR-5 board.
  • 1 @TA = 25 Derate above 25 Thermal resistance, junction-to-ambient Total device dissipation alumina substrate.
  • 2 @TA = 25 derate above 25 Thermal resistance, junction-to-ambient Junct.

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SMD Type Transistors Features NPN Silicon High Voltage Transistors MMBT5550 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 +0.12.4 -0.1 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current -continuous Total device dissipation FR-5 board *1 @TA = 25 Derate above 25 Thermal resistance, junction-to-ambient Total device dissipation alumina substrate *2 @TA = 25 derate above 25 Thermal resistance, junction-to-ambient Junction and storage temperature * 1. FR-5 = 1.0 X 0.75 X 0.062 in. * 2. Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina. Symbol VCEO VCBO VEBO IC PD RèJA PD RèJA TJ, Tstg Rating 140 160 6 600 225 1.8 556 300 2.4 417 -55 to +150 Unit V V V mA mW mW/ /W mW mW/ /W 0-0.1 +0.10.