MMBT5550 Datasheet and Specifications PDF

The MMBT5550 is a NPN Plastic Encapsulate Transistor.

Key Specifications

PackageSOT-23-3
Pins3
Height1.01 mm
Length3.04 mm
Width1.4 mm
Max Operating Temp150 °C
Min Operating Temp-55 °C
Datasheet4U Logo
Part NumberMMBT5550 Datasheet
ManufacturerMicro Commercial Components
Overview MMBT5550 Features • Halogen Free. "Green" Device (Note 1) • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Comp.
* Halogen Free. "Green" Device (Note 1)
* Moisture Sensitivity Level 1
* Epoxy Meets UL 94 V-0 Flammability Rating
* Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings @ 25°C Unless Otherwise Specified Parameter &ROOHFWRU%DVH9ROWDJH &.
Part NumberMMBT5550 Datasheet
DescriptionNPN Transistor
ManufacturerMLS Microelectronics
Overview Features • High Voltage Transistor MMBT5550 Transistor (NPN) C M1F SOT-23 top view Schematic diagram B E Marking and pin assignment Maximum Ratings (Ta=25℃ unless otherwise noted) Symbol Pa.
* High Voltage Transistor MMBT5550 Transistor (NPN) C M1F SOT-23 top view Schematic diagram B E Marking and pin assignment Maximum Ratings (Ta=25℃ unless otherwise noted) Symbol Parameter VCBO VCEO VEBO Ic Pc RθJA TJ , TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base V.
Part NumberMMBT5550 Datasheet
DescriptionNPN General Purpose Amplifier
ManufacturerSINLOON
Overview ભၼሽ՗‫ૻڶ‬ֆ‫׹‬ Mayloon Electronic Co., Ltd., SINLOON® ᠨᄕীདྷ᧯ጥ MMBT5550 SOT-23 NPN General Purpose Amplifier ϭ FEATURE: Ϭ Power Dissipation Ϭ This device is designed for general pur. Ϭ Power Dissipation Ϭ This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Figure ϭ MECHANICAL CHARACTERISTICS: Ϭ Case: SOT-23 Molded Plastic Ϭ Weight: 0.01 Grams (approx) Ϭ Marking: Body top Ϭ Terminals: Plated leads solderable per MIL-STD-202, M.
Part NumberMMBT5550 Datasheet
DescriptionHIGH VOLTAGE TRANSISTOR
ManufacturerMotorola Semiconductor
Overview MMBT5550 CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) HIGH VOLTAGE TRANSISTOR NPN SILICON Refer to 2N5550 for graphs. MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-B. .

Price & Availability

Availability and pricing information from multiple distributors.

Seller Inventory Price Breaks Buy
Avnet 2215000 3000+ : 0.01473 USD
6000+ : 0.01421 USD
12000+ : 0.01401 USD
24000+ : 0.0138 USD
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Avnet 1876 1+ : 0.039 USD View Offer
Newark 1876 1+ : 0.145 USD
25+ : 0.091 USD
50+ : 0.075 USD
100+ : 0.059 USD
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