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MMBT5550
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
HIGH VOLTAGE TRANSISTOR
NPN SILICON
Refer to 2N5550 for graphs.
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
—Collector Current Continuous
Symbol vCEO vCB0 vEBO
'C
THERMAL CHARACTERISTICS
Characteristic
Symbol
"Total Device Dissipation, T^ = 25°C Derate above 25°C
PD
Storage Temperature
T stq
'Thermal Resistance Junction to Ambient
ReJA
"Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage dC = 1.
MMBT5550 Datasheet
