MMBT5550
MMBT5550 is HIGH VOLTAGE TRANSISTOR manufactured by Motorola Semiconductor.
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
HIGH VOLTAGE TRANSISTOR
NPN SILICON
Refer to 2N5550 for graphs.
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
- Collector Current Continuous
Symbol vCEO vCB0 vEBO
'C
THERMAL CHARACTERISTICS
Characteristic
Symbol
"Total Device Dissipation, T^ = 25°C Derate above 25°C
Storage Temperature
T stq
'Thermal Resistance Junction to Ambient
ReJA
"Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage dC = 1.0 mAdc, jb = 0)
Collector-Base Breakdown Voltage dC...
