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NDT5N70P - N-Channel Enhancement MOSFET

Key Features

  • s.
  • VDS (V) = 700V.
  • ID = 5.0 A (VGS = 10V).
  • RDS(ON) ＜ 1.8Ω (VGS = 10V).
  • High Current, High Speed Switching D G S TO-251 1 23 123 Unit: mm.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note1) Tc=25℃ Tc=100℃ Repetitive Pulse Avalanche Energy (Note2) Single Pulse Avalanche Energy (Note2) Peak Diode Recovery dv/dt (Note3) Power Dissipation Tc=25℃ Derate above 25℃ Thermal Resistan.

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DIP Type N-Channel Enhancement MOSFET NDT5N70P MOSFET ■ Features ● VDS (V) = 700V ● ID = 5.0 A (VGS = 10V) ● RDS(ON) ＜ 1.8Ω (VGS = 10V) ● High Current, High Speed Switching D G S TO-251 1 23 123 Unit: mm ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note1) Tc=25℃ Tc=100℃ Repetitive Pulse Avalanche Energy (Note2) Single Pulse Avalanche Energy (Note2) Peak Diode Recovery dv/dt (Note3) Power Dissipation Tc=25℃ Derate above 25℃ Thermal Resistance.Junction- to-Ambient (Note1) Thermal Resistance.Junction- to-Case (Note1) Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM EAR EAS dv/dt PD RthJA RthJC TJ Tstg Rating 700 ±30 5.0 3.15 20 11.2 186 4.5 112 0.89 110 1.