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NDT5N70P Datasheet N-channel Enhancement MOSFET

Manufacturer: Kexin Semiconductor

Overview: DIP Type N-Channel Enhancement MOSFET NDT5N70P MOSFET ■.

Key Features

  • s.
  • VDS (V) = 700V.
  • ID = 5.0 A (VGS = 10V).
  • RDS(ON) ＜ 1.8Ω (VGS = 10V).
  • High Current, High Speed Switching D G S TO-251 1 23 123 Unit: mm.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note1) Tc=25℃ Tc=100℃ Repetitive Pulse Avalanche Energy (Note2) Single Pulse Avalanche Energy (Note2) Peak Diode Recovery dv/dt (Note3) Power Dissipation Tc=25℃ Derate above 25℃ Thermal Resistan.

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