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NDT110N03 - N-Channel MOSFET

Features

  • s.
  • VDS (V) = 30V.
  • ID = 110 A (VGS = 10V).
  • RDS(ON) ＜ 4mΩ (VGS = 10V).
  • RDS(ON) ＜ 6mΩ (VGS = 4.5V).
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package + 0.2 9 .7 0 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 4 +0 1.50 .15 -0.15 2.30 +0.1 -0.1 0.50+0.08 -0.07 0.80+0.1 -0.1 0.127 m ax +0 5.55 .15 -0.15 Unit: mm + 2.65 0.25 -0.1 + 0.50 0.15 -0.15 + 1.50 0.28 -0.1 2.3 4 .60 +0.15 -0.15 0.60+ 0.1 - 0.1 1 Gate 2 Dr.

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SMD Type N-Channel MOSFET NDT110N03 MOSFET ■ Features ● VDS (V) = 30V ● ID = 110 A (VGS = 10V) ● RDS(ON) ＜ 4mΩ (VGS = 10V) ● RDS(ON) ＜ 6mΩ (VGS = 4.5V) ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package + 0.2 9 .7 0 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 4 +0 1.50 .15 -0.15 2.30 +0.1 -0.1 0.50+0.08 -0.07 0.80+0.1 -0.1 0.127 m ax +0 5.55 .15 -0.15 Unit: mm + 2.65 0.25 -0.1 + 0.50 0.15 -0.15 + 1.50 0.28 -0.1 2.3 4 .60 +0.15 -0.15 0.60+ 0.1 - 0.1 1 Gate 2 Drain 3 Source 4 Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Tc=25℃ Tc=70℃ Power Dissipation Repetitive Avalanche Energy (Note.1) Thermal Resistance.
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