Kexin Electronics NDT18N06
N-Channel MOSFET
| Part No. | NDT18N06 |
|---|---|
| Datasheet | NDT18N06 Download |
| Manufacturer | Kexin Electronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● VDS (V) = 60V● ID = 18 A (VGS = 10V)
● RDS(ON) ＜ 55mΩ (VGS = 10V)
● RDS(ON) ＜ 68mΩ (VGS = 4.5V) +0 9.70 .2 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 4 +0 1.50 .15 -0.15 2.30 +0.1 -0.1 0.50 +0.8 -0.7 Unit: mm +0 5.55 .15 -0.15 + 0.50 0.15 -0.15 + 1.50 0.28 -0.1 0.80+0.1 -0.1 0.127 m ax 2.3 4 .60 +0.15 -0.15 0.60+ 0.1 - 0.1 + 2.65 0.25 -0.1 1 Gate 2 Drain 3 Source 4 Drain
●
ABSOLUTE MAXIMUM RATINGS
Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Single Pulsed Avalanche Energy Junction Temperature Storage Temperature Range Symbol Rating Unit VDS 60 V VGS ±20 Tc=25℃ ID Tc=70℃ 18 14.5 A IDM 72 Tc=25℃ PD Tc=70℃ 36 W 23 EAS 25 mJ TJ 150 ℃ Tstg -55 to 150 1 SMD Type N-Channel MOSFET NDT18N06●
ELECTRICAL CHARACTERISTICS
Ta = 25℃ Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Symbol VDSS IDSS IGSS VGS(th) Static Drain-Source On-Resist...
