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NDT15N10 - N-Channel MOSFET

Features

  • RDS(ON) = 80m @VGS = 10V,ID=8A Low gate charge (Typ=24nC) Low CRSS (Typ=23pF) High switching speed TO-252 MOSFET D S G 1. Gate (G) 2. Drain (D) 3. Source (S) Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current TC=25 ,TJ=150 TC=70 ,TJ=150 Power Dissipation TC=25 TC=70 Thermal Resistance. Junction- to-Case (Note.1) Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM PD RthJC TJ Tstg Rating.

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Full PDF Text Transcription

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SMD Type N-Channel MOSFET NDT15N10 Features RDS(ON) = 80m @VGS = 10V,ID=8A Low gate charge (Typ=24nC) Low CRSS (Typ=23pF) High switching speed TO-252 MOSFET D S G 1. Gate (G) 2. Drain (D) 3. Source (S) Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current TC=25 ,TJ=150 TC=70 ,TJ=150 Power Dissipation TC=25 TC=70 Thermal Resistance.Junction- to-Case (Note.1) Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM PD RthJC TJ Tstg Rating 100 ±20 14.7 13.6 59 34.7 22.2 3.6 150 -55 to 150 Unit V A W /W Note.1: The device mounted on 1in 2 FR4 board with 2 oz copper. www.kexin.com.
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