Kexin Electronics NDT6N60
N-Channel MOSFET
| Part No. | NDT6N60 |
|---|---|
| Datasheet | NDT6N60 Download |
| Manufacturer | Kexin Electronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● VDS (V) = 600V● ID = 6 A (VGS = 10V)
● RDS(ON) ＜ 1.7Ω (VGS = 10V)
● Low Gate Charge
● Low Reverse transfer capacitances +0 9.70 .2 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 4 +0 1.50 .15 -0.15 2.30 +0.1 -0.1 0.50 +0.8 -0.7 Unit: mm + 5.55 0.15 -0.15 + 0.50 0.15 -0.15 + 0.2 8 1 .5 0 -0.1 0.80+0.1 -0.1 0.127 m ax 2.3 4 .60 +0.15 -0.15 0.60+ 0.1 - 0.1 + 0.25 2 .6 5 -0.1 1 Gate 2 Drain 3 Source 4 Drain
●
ABSOLUTE MAXIMUM RATINGS
Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Avalanche Energy ,Repetitive Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation Derating Factor above 25°C Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead Junction Temperature MaximumTemperature for Soldering Storage Temperature Range Tc=100℃ (Note.1) (Note.2) Note.1:L=10mH, ID=7.4A, Start TJ=25℃ Note.2:ISD =5A,di/dt ≤100A/us,VDD≤BVDS, Start TJ=25℃ Symbol VDS VGS ID IDM IAR EAR EA...
