NDT6N65P Overview
DIP Type N-Channel Enhancement MOSFET NDT6N65P TO-251 MOSFET.
NDT6N65P Key Features
- VDS (V) = 650V
- ID = 4.8A (VGS = 10V)
- RDS(ON) ＜ 1.8Ω (VGS = 10V)
- Low gate charge ( typical 16nC)
NDT6N65P Datasheet Details
| Part number | NDT6N65P |
|---|---|
| Datasheet | NDT6N65P-Kexin.pdf |
| File Size | 3.17 MB |
| Manufacturer | Kexin Semiconductor |
| Description | N-Channel Enhancement MOSFET |
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