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NDT6N65P - N-Channel Enhancement MOSFET

Key Features

  • s.
  • VDS (V) = 650V.
  • ID = 4.8A (VGS = 10V).
  • RDS(ON) ＜ 1.8Ω (VGS = 10V).
  • Low gate charge ( typical 16nC) D G S 1 23 123 Unit: mm.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Tc=25℃ Tc=100℃ Pulsed Drain Current (Note.1) Avalanche Current (Note.1) Repetitive Avalanche Energy (Note.1) Single Pulsed Avalanche Energy (Note.2) Power Dissipation Tc=25℃ Derate above 25℃ Peak Diode Recovery dv/dt (Not.

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DIP Type N-Channel Enhancement MOSFET NDT6N65P TO-251 MOSFET ■ Features ● VDS (V) = 650V ● ID = 4.8A (VGS = 10V) ● RDS(ON) ＜ 1.8Ω (VGS = 10V) ● Low gate charge ( typical 16nC) D G S 1 23 123 Unit: mm ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Tc=25℃ Tc=100℃ Pulsed Drain Current (Note.1) Avalanche Current (Note.1) Repetitive Avalanche Energy (Note.1) Single Pulsed Avalanche Energy (Note.2) Power Dissipation Tc=25℃ Derate above 25℃ Peak Diode Recovery dv/dt (Note.3) Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Thermal Resistance.