NDT6N65P Description
DIP Type N-Channel Enhancement MOSFET NDT6N65P TO-251 MOSFET.
NDT6N65P Key Features
- VDS (V) = 650V
- ID = 4.8A (VGS = 10V)
- RDS(ON) ＜ 1.8Ω (VGS = 10V)
- Low gate charge ( typical 16nC)
- Part: NDT6N65P
- Manufacturer: Kexin Semiconductor
- Size: 3.17 MB
Related Kexin Semiconductor Datasheets
| Part Number | Description |
|---|---|
| NDT6N60 | N-Channel MOSFET |
| NDT6N60P | N-Channel MOSFET |
| NDT6N70 | N-Channel Enhancement MOSFET |
| NDT6N70P | N-Channel Enhancement MOSFET |
| NDT06N02 | N-Channel MOSFET |