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NDT6N60P Datasheet N-channel MOSFET

Manufacturer: Kexin Semiconductor

Overview: DIP Type N-Channel MOSFET NDT6N60P TO-251 MOSFET ■.

Key Features

  • s.
  • VDS (V) = 600V.
  • ID = 6.2 A (VGS = 10V).
  • RDS(ON) ＜ 1.5Ω (VGS = 10V).
  • Fast switching capability.
  • Low reverse transfer Capacitance Drain 1 23 123 Unit: mm Gate Source.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Power Dissipation Avalanche Energy Single Pulsed (Note 1) Repetitive Peak Diode Recovery dv/dt (Note.2) Thermal Resistance. Junction- to-A.

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