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NDT6N70 - N-Channel Enhancement MOSFET

Key Features

  • s.
  • VDS (V) = 700V.
  • ID = 4.8A (VGS = 10V).
  • RDS(ON) ＜ 1.8Ω (VGS = 10V).
  • Low gate charge ( typical 16nC) D G S + 9.70 0.2 -0.2 TO-252 6.50+ 0.15 - 0.15 5.30+ 0.2 - 0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 Unit: mm + 1.50 0.15 - 0.15 3.80 + 5.55 0.15 -0.15 + 0.50 0.15 - 0.15 + 1.50 0.28 - 0.1 0.80 +0.1 -0.1 0.127 m ax 2.3 4.6 0+ 0.15 - 0.15 0.60+ 0.1 - 0.1 +0 2.65 .25 -0.1 1 Gate 2 Drain 3 Source.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Volta.

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SMD Type N-Channel Enhancement MOSFET NDT6N70 MOSFET ■ Features ● VDS (V) = 700V ● ID = 4.8A (VGS = 10V) ● RDS(ON) ＜ 1.8Ω (VGS = 10V) ● Low gate charge ( typical 16nC) D G S + 9.70 0.2 -0.2 TO-252 6.50+ 0.15 - 0.15 5.30+ 0.2 - 0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 Unit: mm + 1.50 0.15 - 0.15 3.80 + 5.55 0.15 -0.15 + 0.50 0.15 - 0.15 + 1.50 0.28 - 0.1 0.80 +0.1 -0.1 0.127 m ax 2.3 4.6 0+ 0.15 - 0.15 0.60+ 0.1 - 0.1 +0 2.65 .25 -0.1 1 Gate 2 Drain 3 Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note.1) Tc=25℃ Tc=100℃ Avalanche Current (Note.1) Repetitive Avalanche Energy (Note.1) Single Pulsed Avalanche Energy (Note.