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NTS4101P - P-Channel MOSFET

Key Features

  • ƽ VDS ƽ ID ƽ RDS(ON) (at VGS =-4.5V) ƽ RDS(ON) (at VGS =-3.6V) ƽ RDS(ON) (at VGS =-2.5V) -20V -1.37A 83mȍ (Typ. ) 88mȍ (Typ. ) 104mȍ (Typ. ) 4 ( MOSFET 1.Gate 2.Source 3.Drain % Ƶ Absolute Maximum Ratings (TJ = 25ć unless otherwise noted. ) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) VDS VGS TA=25ć ID TA=70ć tp = 10μs IDM Source Current (Body Diode), Continuous IS Power Dissipation (Note 1) TA=25ć PD Thermal Resi.

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SMD Type P-Channel MOSFET NTS4101P Ƶ Features ƽ VDS ƽ ID ƽ RDS(ON) (at VGS =-4.5V) ƽ RDS(ON) (at VGS =-3.6V) ƽ RDS(ON) (at VGS =-2.5V) -20V -1.37A 83mȍ (Typ.) 88mȍ (Typ.) 104mȍ (Typ.) 4 ( MOSFET 1.Gate 2.Source 3.Drain % Ƶ Absolute Maximum Ratings (TJ = 25ć unless otherwise noted.) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) VDS VGS TA=25ć ID TA=70ć tp = 10μs IDM Source Current (Body Diode), Continuous IS Power Dissipation (Note 1) TA=25ć PD Thermal Resistance, Junction- to-Ambient (Note 1) RșJA Junction Temperature TJ Storage Temperature Range Tstg Note 1. Surface-mounted on FR4 board using 1 in sq pad size. Rating -20 ±8 -1.37 -0.62 -4 -0.5 0.329 380 150 -55 to 150 Unit V A W ć/W ć www.