The NTS4101P is a P-Channel MOSFET.
| Package | SOT-323 |
|---|---|
| Pins | 3 |
| Height | 1 mm |
| Length | 2.2 mm |
| Width | 1.35 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | NTS4101P Datasheet |
|---|---|
| Manufacturer | Kexin Semiconductor |
| Overview | SMD Type P-Channel MOSFET NTS4101P Ƶ Features ƽ VDS ƽ ID ƽ RDS(ON) (at VGS =-4.5V) ƽ RDS(ON) (at VGS =-3.6V) ƽ RDS(ON) (at VGS =-2.5V) -20V -1.37A 83mȍ (Typ.) 88mȍ (Typ.) 104mȍ (Typ.) 4 ( MOSFET . ƽ VDS ƽ ID ƽ RDS(ON) (at VGS =-4.5V) ƽ RDS(ON) (at VGS =-3.6V) ƽ RDS(ON) (at VGS =-2.5V) -20V -1.37A 83mȍ (Typ.) 88mȍ (Typ.) 104mȍ (Typ.) 4 ( MOSFET 1.Gate 2.Source 3.Drain % Ƶ Absolute Maximum Ratings (TJ = 25ć unless otherwise noted.) Parameter Symbol Drain-Source Voltage Gate-Source Volta. |
| Part Number | NTS4101P Datasheet |
|---|---|
| Description | Power MOSFET |
| Manufacturer | onsemi |
| Overview |
NTS4101P
Power MOSFET
−20 V, −1.37 A, Single P−Channel, SC−70
Features
• Leading −20 V Trench for Low RDS(on) • −2.5 V Rated for Low Voltage Gate Drive • SC−70 Surface Mount for Small Footprint (2x2.
* Leading *20 V Trench for Low RDS(on) * *2.5 V Rated for Low Voltage Gate Drive * SC *70 Surface Mount for Small Footprint (2x2 mm) * Pb *Free Package is Available Applications * High Side Load Switch * Charging Circuit * Single Cell Battery Applications such as: Cell Phones, Digital Cameras, PDAs M. |
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