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NTS4101P
Power MOSFET
−20 V, −1.37 A, Single P−Channel, SC−70
Features
• Leading −20 V Trench for Low RDS(on) • −2.5 V Rated for Low Voltage Gate Drive • SC−70 Surface Mount for Small Footprint (2x2 mm) • Pb−Free Package is Available
Applications
• High Side Load Switch • Charging Circuit • Single Cell Battery Applications such as: Cell Phones,
Digital Cameras, PDAs
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current (Note 1)
Steady State
Power Dissipation (Note 1)
Steady State
TA = 25°C TA = 70°C TA = 25°C
VDSS VGS ID
PD
−20 ±8 −1.37 −0.62 0.
NTS4101P Datasheet
