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SI2399DS - P-Channel MOSFET

Key Features

  • s.
  • VDS (V) =-20V.
  • ID =-6 A (VGS =±12V).
  • RDS(ON) ＜ 34mΩ (VGS =-10V).
  • RDS(ON) ＜ 45mΩ (VGS =-4.5V).
  • RDS(ON) ＜ 67mΩ (VGS =-2.5V) P-Channel MOSFET SI2399DS (KI2399DS) SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 +0.1 2.4 -0.1 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 MOSFET Unit: mm 0.1 +0.05 -0.01 1. Gate 2. Source 3. Drain 0-0.1 +0.1 0.38 -0.1.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage T.

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SMD Type ■ Features ● VDS (V) =-20V ● ID =-6 A (VGS =±12V) ● RDS(ON) ＜ 34mΩ (VGS =-10V) ● RDS(ON) ＜ 45mΩ (VGS =-4.5V) ● RDS(ON) ＜ 67mΩ (VGS =-2.5V) P-Channel MOSFET SI2399DS (KI2399DS) SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 +0.1 2.4 -0.1 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 MOSFET Unit: mm 0.1 +0.05 -0.01 1. Gate 2. Source 3. Drain 0-0.1 +0.1 0.38 -0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage TC=25℃ Continuous Drain Current TC=70℃ TA=25℃*1*2 TA=70℃*1*2 Pulsed Drain Current TC=25℃ Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Foot TC=70℃ TA=25℃*1*2 TA=70℃*1*2 ≤5S *1*3 Junction Temperature Junction Storage Temperature Range Notes: *1.