WNM2046 Datasheet | Kexin Semiconductor

Features - VDS (V) = 20V - ID = 0.71 A - RDS(ON) < 0.42Ω (VGS = 4.5V) - RDS(ON) < 0.500Ω (VGS = 2.5V) - RDS(ON) < 0.60Ω (VGS = 1.8V) Drain Gate Source SOT-923 3 0.75 0.85 0.90 1.10 2 1 7º REF. 0.15 Max. 7º REF. 0.10 0.22 0.35TYP. 0.55 0.65 Uint: mm 0.35 0.43 1. Gate 2. Source 3. Drain - Absolute Maximum Ratings Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current a d Maximum Power Dissipation a d Continuous Drain Current b d Maximum Power Dissipation b d Pulsed Drain Current c Thermal Resistance.Junction- to-Ambient a Thermal Resistance.Junction- to-Ambient b Thermal Resistance.Junction- to-Case Junction Temperature Storage Temperature Range TA=25℃ TA=70℃ TA=25℃ TA=70℃ TA=25℃ TA=70℃ TA=25℃ TA=70℃ Symbol VDS VGS ID PD IDM Rth JA Rth JA Rth JC TJ Tstg a. Surfacemounted on FR4 Board using 1square inchpad size, 1ozcopper b. Surface mounted on FR4 board using minimum pad size, 1oz copper c. Pulse width<380μs, Single pulse d. Maximum junction temperature TJ=150°C. e. Pulse test: Pulse width <380 us duty cycle <2%. 10 S Steady...