Kexin Electronics WPM2005B
P+Schottky Hybrid MOSFET
| Part No. | WPM2005B |
|---|---|
| Datasheet | WPM2005B Download |
| Manufacturer | Kexin Electronics |
| Description | P+Schottky Hybrid MOSFET |
| Buy | Stock & Price |
FEATURES
● VDS (V) =-20V● ID =-2.7 A (VGS =-10V)
● RDS(ON) ＜ 125mΩ (VGS =-4.5V)
● RDS(ON) ＜ 160mΩ (VGS =-2.5V)
● Ultra Low VF Schottky DFN3X2-8L 0.35 (max) 0.24 (min) Unit:mm 0.05 (max) 1.70 BSC 2.00 BSC 0.65 BSC 3.00 BSC 0.25 (max) 0.08 (min) 0.80 ± 0.1 0.40 (max) 0.20 (min) 0.10 (max) 1 A A2 S3 G4 8 C 7C 6 D D 5
●
ABSOLUTE MAXIMUM RATINGS
Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Peak Repetitive Reverse Voltage DC Blocking Voltage Continuous Drain Current Pulsed Drain Current Average Rectified Forward Current Power Dissipation Thermal Resistance.Junction- to-Ambient Junction Temperature Junction Storage Temperature Range Symbol VDS VGS VRRM VR ID IDM IF PD RthJA TJ Tstg MOSFET Schottky -20 - ±8 - - 20 - 20 -2.7 - -10 - - 1 1.1 - 110 - 150 -55 to 150 Unit V A W ℃/W ℃ 1 SMD Type MOSFET P+Schottky Hybrid MOSFET WPM2005B (KPM2005B)●
ELECTRICAL CHARACTERISTICS
Ta = 25℃ Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body leakage current Ga...
