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WPM2005B - P+Schottky Hybrid MOSFET

Key Features

  • s.
  • VDS (V) =-20V.
  • ID =-2.7 A (VGS =-10V).
  • RDS(ON) ＜ 125mΩ (VGS =-4.5V).
  • RDS(ON) ＜ 160mΩ (VGS =-2.5V).
  • Ultra Low VF Schottky DFN3X2-8L 0.35 (max) 0.24 (min) Unit:mm 0.05 (max) 1.70 BSC 2.00 BSC 0.65 BSC 3.00 BSC 0.25 (max) 0.08 (min) 0.80 ± 0.1 0.40 (max) 0.20 (min) 0.10 (max) 1 A A2 S3 G4 8 C 7C 6 D D 5.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Peak Repetitive Reverse Voltage DC Blocking Voltage Continuous Drain.

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SMD Type P+Schottky Hybrid MOSFET WPM2005B (KPM2005B) MOSFET ■ Features ● VDS (V) =-20V ● ID =-2.7 A (VGS =-10V) ● RDS(ON) ＜ 125mΩ (VGS =-4.5V) ● RDS(ON) ＜ 160mΩ (VGS =-2.5V) ● Ultra Low VF Schottky DFN3X2-8L 0.35 (max) 0.24 (min) Unit:mm 0.05 (max) 1.70 BSC 2.00 BSC 0.65 BSC 3.00 BSC 0.25 (max) 0.08 (min) 0.80 ± 0.1 0.40 (max) 0.20 (min) 0.10 (max) 1 A A2 S3 G4 8 C 7C 6 D D 5 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Peak Repetitive Reverse Voltage DC Blocking Voltage Continuous Drain Current Pulsed Drain Current Average Rectified Forward Current Power Dissipation Thermal Resistance.