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WPM2009D - P-MOSFET

Product Overview

WillSEMI

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WPM2009D P-MOSFET by WillSEMI - Datasheet Preview — Datasheet preview – WPM2009D

Datasheet Details

Part number	WPM2009D
Manufacturer	WillSEMI
File Size	193.15 KB
Description	P-MOSFET
Datasheet	WPM2009D Datasheet
Additional preview pages of the WPM2009D datasheet.

WPM2009D Product details

Description

This single P-Channel MOSFET is produced using trench process that provides minimum on resistance performance.

WPM2009D is enhancement power MOSFET with 2.0W power dissipation mounting 1 in2 pad in a DFN3x3 package.

This device is suited for high power charging circuit of mobile phone application.

Features

z Max Rds(on) 42m @ Vgs=-4.5V z Max Vds -20V z Max Current -4.0A z Typical Vgs(th) -0.65V @ Id=-250uA z Power Dissipation 2.0W (Note2) z High performance Trench process z DFN3x3-8L Package z Pb-Free.

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Published: Jan 9, 2016 |