WPM2009D
Overview
This single P-Channel MOSFET is produced using trench process that provides minimum on resistance performance. WPM2009D is enhancement power MOSFET with 2.0W power dissipation mounting 1 in2 pad in a DFN3x3 package.
| Part | WPM2009D |
|---|---|
| Description | P-MOSFET |
| Category | MOSFET |
| Manufacturer | WillSEMI |
| Size | 193.15 KB |
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