Datasheet Summary
-20V, -4A, 42m, 2.0W, DFN3x3, P-MOSFET
Descriptions
This single P-Channel MOSFET is produced using trench process that provides minimum on resistance performance. WPM2009D is enhancement power MOSFET with 2.0W power dissipation mounting 1 in2 pad in a DFN3x3 package. This device is suited for high power charging circuit of mobile phone application. It also can be used in a high power switching application.
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DFN3x3-8L Bottom
Features z Max Rds(on) 42m @ Vgs=-4.5V z Max Vds
-20V z Max Current
-4.0A z Typical Vgs(th) -0.65V @ Id=-250uA z Power Dissipation 2.0W (Note2) z High performance Trench process z DFN3x3-8L Package z...