Datasheet Details
| Part number | WPM2009D |
|---|---|
| Manufacturer | WillSEMI |
| File Size | 193.15 KB |
| Description | P-MOSFET |
| Datasheet | WPM2009D-WillSEMI.pdf |
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Overview: WPM2009D -20V, -4A, 42m, 2.0W, DFN3x3, P-MOSFET.
| Part number | WPM2009D |
|---|---|
| Manufacturer | WillSEMI |
| File Size | 193.15 KB |
| Description | P-MOSFET |
| Datasheet | WPM2009D-WillSEMI.pdf |
|
|
|
s This single P-Channel MOSFET is produced using trench process that provides minimum on resistance performance.
WPM2009D is enhancement power MOSFET with 2.0W power dissipation mounting 1 in2 pad in a DFN3x3 package.
This device is suited for high power charging circuit of mobile phone application.
| Part Number | Description |
|---|---|
| WPM2005 | Power MOSFET and Schottky Diode |
| WPM2005B | Power MOSFET and Schottky Diode |
| WPM2006 | Power MOSFET and Schottky Diode |
| WPM2014 | Single P-Channel Power MOSFET |
| WPM2015 | Single P-Channel Power MOSFET |
| WPM2019 | Single P-Channel Power MOSFET |
| WPM2026 | Single P-Channel Power MOSFET |
| WPM2031 | Single P-Channel Power MOSFET |
| WPM2037 | Single P-Channel Power MOSFET |
| WPM2045 | Integrated P-Channel Power MOSFET |