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WPM2009D - P-MOSFET

General Description

This single P-Channel MOSFET is produced using trench process that provides minimum on resistance performance.

WPM2009D is enhancement power MOSFET with 2.0W power dissipation mounting 1 in2 pad in a DFN3x3 package.

This device is suited for high power charging circuit of mobile phone application.

Key Features

  • z Max Rds(on) 42mŸ @ Vgs=-4.5V z Max Vds -20V z Max Current -4.0A z Typical Vgs(th) -0.65V @ Id=-250uA z Power Dissipation 2.0W (Note2) z High performance Trench process z DFN3x3-8L Package z Pb-Free.

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Datasheet Details

Part number WPM2009D
Manufacturer WillSEMI
File Size 193.15 KB
Description P-MOSFET
Datasheet download datasheet WPM2009D Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WPM2009D -20V, -4A, 42mŸ, 2.0W, DFN3x3, P-MOSFET Descriptions This single P-Channel MOSFET is produced using trench process that provides minimum on resistance performance. WPM2009D is enhancement power MOSFET with 2.0W power dissipation mounting 1 in2 pad in a DFN3x3 package. This device is suited for high power charging circuit of mobile phone application. It also can be used in a high power switching application. WPM2009D Http://www.willsemi.com Bottom DFN3x3-8L Bottom Features z Max Rds(on) 42mŸ @ Vgs=-4.5V z Max Vds -20V z Max Current -4.0A z Typical Vgs(th) -0.65V @ Id=-250uA z Power Dissipation 2.