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WPM2005
WPM2005 Power MOSFET and Schottky Diode
Features
z Featuring a MOSFET and Schottky Diode z Independent Pinout to each Device to Ease Circuit Design
z Ultra Low VF Schottky
Applications
z Li--Ion Battery Charging z High Side DC-DC Conversion Circuits z High Side Drive for Small Brushless DC Motors
z Power Management in Portable, Battery Powered Products
MOSFET MAXIMUM RATINGS (TJ = 25ć unless otherwise noted)
Parameter
DrainïtoïSource Voltage
GateïtoïSource Voltage
Continuous Drain Current (Note 1)
Power Dissipation (Note 1)
Steady State
t≤5s
Steady State
t≤5s
TJ = 25°C TJ = 85°C TJ = 25°C
TJ = 25°C
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Symbol VDS VGS ID
PD
IDM TJ, TSTG
Source Current (Body Diode)
Lead Temperature for Solderi
WPM2005 Datasheet
