The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
WPM2005B
Power MOSFET and Schottky Diode
Features
z Featuring a MOSFET and Schottky Diode z Independent Pinout to each Device to Ease Circuit Design
z Ultra Low VF Schottky
Applications
z Li--Ion Battery Charging z High Side DC-DC Conversion Circuits z High Side Drive for Small Brushless DC Motors
z Power Management in Portable, Battery Powered Products
WPM2005B
DFN3×2-8L
MOSFET MAXIMUM RATINGS (TJ = 25ć unless otherwise noted)
Parameter
Symbol
Value
Units
Drain-Source voltage Gate-Source Voltage Continuous Drain Current Drain Current-Pulsed Power Dissipation Junction Temperature Storage Temperature Thermal Resistance, Junction-to-Ambient
VDSS VGS ID IDM PD TJ Tstg RԦJA
-20 f8 -2.7
-10 1.