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WPM2006 Power MOSFET and Schottky Diode
WPM2006
Features
z Featuring a MOSFET and Schottky Diode z Independent Pinout to each Device to Ease Circuit Design z Ultra Low VF Schottky
DFN2*2 -6L
Applications
z Li--Ion Battery Charging z High Side DC-DC Conversion Circuits z High Side Drive for Small Brushless DC Motors z Power Management in Portable, Battery Powered Products
MOSFET MAXIMUM RATINGS (TJ = 25ć unless otherwise noted)
Parameter
DrainŦtoŦSource Voltage
GateŦtoŦSource Voltage
Continuous Drain Current (Note 1)
Power Dissipation (Note 1)
Steady State
t≤5s
Steady State
t≤5s
TA = 25°C TA = 85°C TA = 25°C
TA = 25°C
Continuous Drain Current (Note 2)
Power Dissipation (Note 2)
Steady State
TA = 25°C TA = 85°C
TA = 25°C
Pulsed Drain Current
tp = 10 ms
Operating Junct
WPM2006 Datasheet
