MMBT3906
MMBT3906 is PNP Silicon General Purpose Transistors manufactured by Kingtronics.
PNP Silicon General Purpose Transistors
For switching and amplifier applications
As plementary types the NPN transistors
MMBT3904 is remended.
Absolute Maximum Ratings (Ta = 25℃)
PARAMETER
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25℃
PARAMETER
DC Current Gain at -VCE = 1 V, -IC = 0.1 m A at -VCE = 1 V, -IC = 1 m A at -VCE = 1 V, -IC = 10 m A at -VCE = 1 V, -IC = 50 m A at -VCE = 1 V, -IC = 100 m A Collector Base Cutoff Current at -VCB = 30 V Emitter Base Cutoff Current at -VEB = 6 V Collector Base Breakdown Voltage at -IC = 10 µA Collector Emitter Breakdown Voltage at -IC = 1 m A Emitter Base Breakdown Voltage at -IE = 10 µA Collector Emitter Saturation Voltage at -IC = 10 m A, -IB = 1 m A at -IC = 50 m A, -IB = 5 m A Base Emitter Saturation Voltage at -IC = 10 m A, -IB = 1 m A at -IC = 50 m A, -IB = 5 m A Current Gain Bandwidth Product at -VCE = 20 V, -IC = 10 m A, f = 100 MHz Output Capacitance at -VCB = 5 V, IE = 0, f = 1 MHz Delay Time at -VCC = 3 V, -VBE = 0.5 V, -IC = 10 m A, -IB1 = 1 m A Rise Time at -VCC = 3 V, -VBE = 0.5 V, -IC = 10 m A, -IB1 = 1 m A Storage Time at -VCC = 3 V, -IC = 10 m A, -IB1 = IB2 = 1 m A Fall Time at -VCC = 3 V, -IC = 10 m A, -IB1 = IB2 = 1 m A
.kingtronics.
SYMBOL -VCBO -VCEO -VEBO -IC Ptot Tj Tstg
1.Base 2.Emitter 3.Collector SOT-23 Plastic Package
VALUE 40 40 6 200 350 150
- 55 to + 150
UNIT V V V m A m W ℃ ℃
SYMBOL h FE
-ICBO -IEBO -V(BR)CBO -V(BR)CEO -V(BR)EBO -VCE(sat)
-VBE(sat) f T
Cobo td tr ts tf
MIN.
60 80 100 60 30
- -
- 0.65
- 250
- -
- -
- MAX.
300 50
-...
