The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION. FEATURE
Complementary to MPS8550S.
L
MPS8050S
EPITAXIAL PLANAR NPN TRANSISTOR
E B
L
2
3
MAXIMUM RATING (Ta=25
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range
)
SYMBOL VCBO VCEO VEBO IC PC * Tj Tstg RATING 40 25 6 1.5 350 150 -55 150 0.6 ) UNIT V
1
P
P
N
C
V V A mW
DIM A B C D E G H J K L M N P
MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7
A
G
H
M
1. EMITTER 2. BASE 3. COLLECTOR
* PC : Package Mounted On 99.5% Alumina (10 8
K
SOT-23
Marking
h FE Rank Lot No.
MPS8050S Datasheet
