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KS2305AA - Single P-Channel Advanced Power MOSFET

General Description

D G S SOT23 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300

Key Features

  • -20V/-4.1A, RDS (ON) =38mΩ(Typ. )@VGS=-4.5V RDS (ON) =50mΩ(Typ. )@VGS=-2.5V.
  • Low RDS (ON).
  • Super High Dense Cell Design.
  • Reliable and Rugged.

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Datasheet Details

Part number KS2305AA
Manufacturer Kwansemi
File Size 560.87 KB
Description Single P-Channel Advanced Power MOSFET
Datasheet download datasheet KS2305AA Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Features • -20V/-4.1A, RDS (ON) =38mΩ(Typ.)@VGS=-4.5V RDS (ON) =50mΩ(Typ.)@VGS=-2.5V • Low RDS (ON) • Super High Dense Cell Design • Reliable and Rugged Applications • Load Switch • Power Management KS2305AA Single P-Channel Advanced Power MOSFET Pin Description D G S SOT23 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested ID② Continuous Drain Current(VGS=-4.