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KS2468UA2 - Dual N-Channel Advanced Power MOSFET

Datasheet Summary

Description

D1 G2 Pin1 S2 D1 D2 S1 G1 D2 Pin1 SDFN2020 DP1 D1 D2 G1 G2 Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Conti

Features

  • 20V/6A, RDS (ON) =26mΩ(Typ. )@VGS=4.5V RDS (ON) =36mΩ(Typ. )@VGS=2.5V.
  • Low RDS (ON).
  • Super High Dense Cell Design.
  • Reliable and Rugged.

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Datasheet Details

Part number KS2468UA2
Manufacturer Kwansemi
File Size 503.45 KB
Description Dual N-Channel Advanced Power MOSFET
Datasheet download datasheet KS2468UA2 Datasheet
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Full PDF Text Transcription

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Features • 20V/6A, RDS (ON) =26mΩ(Typ.)@VGS=4.5V RDS (ON) =36mΩ(Typ.)@VGS=2.5V • Low RDS (ON) • Super High Dense Cell Design • Reliable and Rugged Applications • Power Management • Battery Protection KS2468UA2 Dual N-Channel Advanced Power MOSFET Pin Description D1 G2 Pin1 S2 D1 D2 S1 G1 D2 Pin1 SDFN2020 DP1 D1 D2 G1 G2 Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested ID② Continuous Drain Current(VGS=4.
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