Datasheet4U Logo Datasheet4U.com

KS2310HB - Single P-Channel Advanced Power MOSFET

General Description

D D D D G S S pin1 S SOP8 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted o

Key Features

  • -20V/-14A, RDS (ON) =7mΩ(Typ. )@VGS=-4.5V RDS (ON) =9mΩ(Typ. )@VGS=-2.5V RDS (ON) =12mΩ(Typ. )@VGS=-1.8V.
  • Low RDS (ON).
  • Super High Dense Cell Design.
  • Reliable and Rugged.

📥 Download Datasheet

Datasheet Details

Part number KS2310HB
Manufacturer Kwansemi
File Size 507.17 KB
Description Single P-Channel Advanced Power MOSFET
Datasheet download datasheet KS2310HB Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
KS23 Surface Mount Schottky Barrier Rectifiier KEXIN
KS200 Switch KCB
KS201 Switch KCB
KS207 Switch KCB
KS21TK305A Color TV Receiver ETC

Other Datasheets by Kwansemi

Part Number Description
KS2305AA Single P-Channel Advanced Power MOSFET
KS2468UA2 Dual N-Channel Advanced Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
KS2310HB Single P-Channel Advanced Power MOSFET Features • -20V/-14A, RDS (ON) =7mΩ(Typ.)@VGS=-4.5V RDS (ON) =9mΩ(Typ.)@VGS=-2.5V RDS (ON) =12mΩ(Typ.)@VGS=-1.8V • Low RDS (ON) • Super High Dense Cell Design • Reliable and Rugged Applications • Load Switch • PWM Applications • Power Management Pin Description D D D D G S S pin1 S SOP8 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested ID② Continuous Drain Current(VGS=-4.