KS2310HB
KS2310HB is Single P-Channel Advanced Power MOSFET manufactured by Kwansemi.
Features
- -20V/-14A,
RDS (ON) =7mΩ(Typ.)@VGS=-4.5V RDS (ON) =9mΩ(Typ.)@VGS=-2.5V RDS (ON) =12mΩ(Typ.)@VGS=-1.8V
- Low RDS (ON)
- Super High Dense Cell Design
- Reliable and Rugged
Applications
- Load Switch
- PWM Applications
- Power Management
Pin Description
S pin1
SOP8
Absolute Maximum Ratings
Symbol
Parameter mon Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS Gate-Source Voltage
Maximum Junction Temperature
TSTG Storage Temperature Range
Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP①
300μs Pulse Drain Current Tested
ID②
Continuous Drain Current(VGS=-4.5V)
Maximum Power Dissipation
Rq JC
③
Rq JA
Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient
Drain-Source Avalanche...
