KS2310HB - Single P-Channel Advanced Power MOSFET

Product Overview

Datasheet Details

Part number	KS2310HB
Manufacturer	Kwansemi
File Size	507.17 KB
Description	Single P-Channel Advanced Power MOSFET
Datasheet	KS2310HB Datasheet
Additional preview pages of the KS2310HB datasheet.

Product details

Description

D D D D G S S pin1 S SOP8 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted o

Features

-20V/-14A, RDS (ON) =7mΩ(Typ. )@VGS=-4.5V RDS (ON) =9mΩ(Typ. )@VGS=-2.5V RDS (ON) =12mΩ(Typ. )@VGS=-1.8V.
Low RDS (ON).
Super High Dense Cell Design.
Reliable and Rugged.

📁 Similar Datasheet

KS23 - Surface Mount Schottky Barrier Rectifiier (KEXIN)
KS200 - Switch (KCB)
KS201 - Switch (KCB)
KS207 - Switch (KCB)
KS21TK305A - Color TV Receiver (ETC)
KS22 - Surface Mount Schottky Barrier Rectifiier (KEXIN)
KS2206B - 2.3W DUAL AUDIO POWER AMP (Samsung semiconductor)
KS221K05 - Single Darlington Transistor Module (Powerex Power Semiconductors)

Other Datasheets by Kwansemi

KS2305AA - Single P-Channel Advanced Power MOSFET
KS2468UA2 - Dual N-Channel Advanced Power MOSFET

Published: Nov 12, 2025 |