Datasheet Details
| Part number | KS2310HB |
|---|---|
| Manufacturer | Kwansemi |
| File Size | 507.17 KB |
| Description | Single P-Channel Advanced Power MOSFET |
| Datasheet | KS2310HB-Kwansemi.pdf |
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Overview: KS2310HB Single P-Channel Advanced Power MOSFET.
| Part number | KS2310HB |
|---|---|
| Manufacturer | Kwansemi |
| File Size | 507.17 KB |
| Description | Single P-Channel Advanced Power MOSFET |
| Datasheet | KS2310HB-Kwansemi.pdf |
|
|
|
D D D D G S S pin1 S SOP8 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested ID② Continuous Drain Current(VGS=-4.5V) PD Maximum Power Dissipation RqJC ③ RqJA Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings EAS④ Avalanche Energy, Single Pulsed S Single P-Channel MOSFET Rating Unit TA=25°C -20 V ±12 150 °C -55 to 150 °C -2.6 A TA=25°C TA=25°C TA=70°C TA=25°C TA=70°C -56 A -14 A -11 2.5 W 1.6 25 °C/W 50 °C/W 25 mJ Kwansemi Semiconductor Co., Ltd Rev.
A– MAY., 2020 1 www.kwansemi.com KS2310HB Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test Condition KS2310HB Min.
Typ.
| Part Number | Description |
|---|---|
| KS2305AA | Single P-Channel Advanced Power MOSFET |
| KS2468UA2 | Dual N-Channel Advanced Power MOSFET |