MD56V62160E Description
The MD56V62160E is a 4-Bank 1,048,576-word 16-bit Synchronous dynamic RAM fabricated in LAPIS Semiconductor’s silicon-gate CMOS technology. The device operates at 3.3 V. The inputs and outputs are LVTTL patible.
MD56V62160E Key Features
- Silicon gate, quadruple poly-silicon CMOS, 1-transistor memory cell
- 4-Bank 1,048,576-word 16-bit configuration
- Single 3.3 V power supply, 0.3 V tolerances
- Input : LVTTL patible
- Output : LVTTL patible
- Refresh : 4096 cycles/64 ms
- Programmable data transfer mode
- CAS Latency (2, 3)
- Burst Length (1, 2, 4, 8, Full Page)
- Data scramble (sequential, interleave)