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MR44V064B
64k(8,192-Word × 8-Bit) FeRAM (Ferroelectric Random Access Memory) I2C
FEDR44V064B-01
Issue Date: Jan. 08, 2016
GENERAL DESCRIPTION
The MR44V064B is a nonvolatile 8,192-word x 8-bit ferroelectric random access memory (FeRAM) developed in the ferroelectric process and silicon-gate CMOS technology. The MR44V064B is accessed using Two-wire Serial Interface ( I2C BUS ).Unlike SRAMs, this device, whose cells are nonvolatile, eliminates battery backup required to hold data. This device has no mechanisms of erasing and programming memory cells and blocks, such as those used for various EEPROMs. Therefore, the write cycle time can be equal to the read cycle time and the power consumption during a write can be reduced significantly.
MR44V064B Datasheet
