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MR44V100A
FEDR44V100A-02
Issue Date: Oct. 25, 2018
1M Bit(131,072-Word -Word 8-Bit) FeRAM (Ferroelectric Random Access Memory) I2C
GENERAL DESCRIPTION
The MR44V100A is a nonvolatile 131,072-word x 8-bit ferroelectric random access memory (FeRAM) developed in the ferroelectric process and silicon-gate CMOS technology. The MR44V100A is accessed using Two-wire Serial Interface ( I2C BUS ).Unlike SRAMs, this device, whose cells are nonvolatile, eliminates battery backup required to hold data. This device has no mechanisms of erasing and programming memory cells and blocks, such as those used for various EEPROMs. Therefore, the write cycle time can be equal to the read cycle time and the power consumption during a write can be reduced significantly.
MR44V100A Datasheet
