MR48V256C Datasheet | LAPIS

32,768-Word  8-Bit FeRAM (Ferroelectric Random Access Memory) FEDR48V256C-04 Issue Date: Nov. 15, 2018 GENERAL DESCRIPTION The MR48V256C is a nonvolatile 32,768-word x 8-bit ferroelectric random access memory (FeRAM) developed in the ferroelectric process and silicon-gate CMOS technology. Unlike SRAMs, this device, whose cells are nonvolatile, eliminates battery backup required to hold data. This device has no mechanisms of erasing and programming memory cells and blocks, such as those used for various EEPROMs. Therefore, the write cycle time can be equal to the read cycle time and the power consumption during a write can be reduced significantly. The MR48V256C can be used in...