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LMN7002K - 60V N-Channel Enhancement Mode MOSFET

General Description

LMN7002K, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Drivers:Relays,Solenoids,Lamps,Hammers, Display, Memories, Transistors, etc.

High saturation current capability.

Key Features

  • 60V/0.5A, RDS(ON) =2.4Ω@VGS = 10V.
  • 60V/0.3A, RDS(ON) =3.0Ω@VGS = 4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.
  • ESD Protection (2KV) Diode design-in.
  • SOT-23 package design These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surfa.

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Datasheet Details

Part number LMN7002K
Manufacturer LFC semi
File Size 709.90 KB
Description 60V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet LMN7002K Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LMN7002K Rev. 1.0 LMN7002K 60V N-Channel Enhancement Mode MOSFET Features ● 60V/0.5A, RDS(ON) =2.4Ω@VGS = 10V ● 60V/0.3A, RDS(ON) =3.0Ω@VGS = 4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability ● ESD Protection (2KV) Diode design-in ● SOT-23 package design These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Product Description LMN7002K, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.