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LMN7002KTFF - 60V N-Channel Enhancement Mode MOSFET

Description

LMN7002K, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Drivers:Relays,Solenoids,Lamps,Hammers, Display, Memories, Transistors, etc.

High saturation current capability.

Features

  • 60V/0.5A, RDS(ON) =3.0Ω@VGS = 10V.
  • 60V/0.4A, RDS(ON) =4.0Ω@VGS = 4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.
  • ESD Protection (2KV) Diode design-in.
  • DFN1006-3L package design These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial s.

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Datasheet preview – LMN7002KTFF

Datasheet Details

Part number LMN7002KTFF
Manufacturer LFC semi
File Size 460.36 KB
Description 60V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet LMN7002KTFF Datasheet
Additional preview pages of the LMN7002KTFF datasheet.

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Full PDF Text Transcription

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LMN7002KTFF Rev. 1.0 LMN7002KTFF 60V N-Channel Enhancement Mode MOSFET Features ● 60V/0.5A, RDS(ON) =3.0Ω@VGS = 10V ● 60V/0.4A, RDS(ON) =4.0Ω@VGS = 4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability ● ESD Protection (2KV) Diode design-in ● DFN1006-3L package design These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Product Description LMN7002K, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
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