Datasheet4U Logo Datasheet4U.com

LMN7002KTFF - 60V N-Channel Enhancement Mode MOSFET

General Description

LMN7002K, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Drivers:Relays,Solenoids,Lamps,Hammers, Display, Memories, Transistors, etc.

High saturation current capability.

Key Features

  • 60V/0.5A, RDS(ON) =3.0Ω@VGS = 10V.
  • 60V/0.4A, RDS(ON) =4.0Ω@VGS = 4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.
  • ESD Protection (2KV) Diode design-in.
  • DFN1006-3L package design These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial s.

📥 Download Datasheet

Datasheet Details

Part number LMN7002KTFF
Manufacturer LFC semi
File Size 460.36 KB
Description 60V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet LMN7002KTFF Datasheet

Other Datasheets by LFC semi

Part Number Description
LMN7002K 60V N-Channel Enhancement Mode MOSFET
LMN7002KAF 60V N-Channel Enhancement Mode MOSFET
LMN7002Y 60V N-Channel Enhancement Mode MOSFET
LMN02N15TSF 150V N-Channel MOSFET
LMN0910P 100V N-Channel MOSFET
LMN1072KAF 20V N-Channel Enhancement Mode MOSFET
LMN1072KJZF 20V N-Channel Enhancement Mode MOSFET
LMN1072KTFF 20V N-Channel Enhancement Mode MOSFET
LMN1072KX7F 20V N-Channel Enhancement Mode MOSFET
LMN1073KX7F 20V N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
LMN7002KTFF Rev. 1.0 LMN7002KTFF 60V N-Channel Enhancement Mode MOSFET Features ● 60V/0.5A, RDS(ON) =3.0Ω@VGS = 10V ● 60V/0.4A, RDS(ON) =4.0Ω@VGS = 4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability ● ESD Protection (2KV) Diode design-in ● DFN1006-3L package design These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Product Description LMN7002K, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.