LMNDD10N20 Overview
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. Applications Networking Load Switch LED Applications Li Battery Pack Applications LMNDD10N20DF (TO252-2L) Description Gate...
LMNDD10N20 Key Features
- 200V,8A, RDS(ON) =400mΩ@VGS = 10V
- Improved dv/dt capability
- Fast switching
- VGS Guaranteed ±25V
- Green Device Available
- TO-252-2L package design