LMP2165JZF Overview
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. Applications Notebook Load Switch Hand-held Instruments LMP2165JZF (SOT-23) Top Views Pin Description 1 Gate 2 Source 3 Drain...
LMP2165JZF Key Features
- 20V, -4.1A, RDS(ON) =65mΩ@VGS = -4.5V
- Improved dv/dt capability
- Fast switching
- Suit for -1.8V Gate Drive
LMP2165JZF Applications
- Green Device Available