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LMP2165RF - 20V P-Channel Enhancement MOSFET

General Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • RDS(ON) =65mΩ@VGS = -4.5V.
  • Improved dv/dt capability.
  • Fast switching.
  • Suit for -1.8V Gate Drive.

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Datasheet Details

Part number LMP2165RF
Manufacturer LFC semi
File Size 295.86 KB
Description 20V P-Channel Enhancement MOSFET
Datasheet download datasheet LMP2165RF Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LMP2165RF Rev. 1.0 LMP2165RF 20V P-Channel Enhancement MOSFET Features ● RDS(ON) =65mΩ@VGS = -4.5V ● Improved dv/dt capability ● Fast switching ● Suit for -1.8V Gate Drive Applications ● Green Device Available ● SOT-23-6L package design These devices are particularly suited for high efficiency fast switching applications. Product Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.