LMP2165RF Overview
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. Applications Notebook Load Switch Hand-held Instruments LMP2165RF (SOT-23-6L) Top Views Pin Description 1 Drain 2 Drain 3 Gate...
LMP2165RF Key Features
- RDS(ON) =65mΩ@VGS = -4.5V
- Improved dv/dt capability
- Fast switching
- Suit for -1.8V Gate Drive
LMP2165RF Applications
- Green Device Available