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LMP2165X5F - 20V P-Channel Enhancement MOSFET

Datasheet Summary

Description

LMP2165, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Portable Equipment Battery Powered System Net Working System Pin Configuration LMP2165X5F (SOT-323) Top Views Pin Description 1 Gate 2 So

Features

  • -20V/-1.5A, RDS(ON) =70mΩ@VGS = -4.5V.
  • -20V/-1.2A, RDS(ON) =90mΩ@VGS = -2.5V.
  • -20V/-0.8A, RDS(ON) =130mΩ@VGS = -1.8V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability These devices are particularly suited for low Voltage power management, such as smart Phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applicati.

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Datasheet Details

Part number LMP2165X5F
Manufacturer LFC semi
File Size 748.53 KB
Description 20V P-Channel Enhancement MOSFET
Datasheet download datasheet LMP2165X5F Datasheet
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Full PDF Text Transcription

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LMP2165X5F Rev. 1.0 LMP2165X5F 20V P-Channel Enhancement MOSFET Features ● -20V/-1.5A, RDS(ON) =70mΩ@VGS = -4.5V ● -20V/-1.2A, RDS(ON) =90mΩ@VGS = -2.5V ● -20V/-0.8A, RDS(ON) =130mΩ@VGS = -1.8V ● Super high density cell design for extremely low RDS (ON) ● Exceptional on-resistance and maximum DC current capability These devices are particularly suited for low Voltage power management, such as smart Phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Product Description LMP2165, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
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