LMP2165X5F Overview
LMP2165, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. Applications Portable Equipment Battery Powered System Net Working System LMP2165X5F (SOT-323) Top Views Pin Description 1 Gate 2 Source 3 Drain LMP2165X5F Notice: The information in this document is subject to change without notice.
LMP2165X5F Key Features
- 20V/-1.5A, RDS(ON) =70mΩ@VGS = -4.5V
- 20V/-1.2A, RDS(ON) =90mΩ@VGS = -2.5V
- 20V/-0.8A, RDS(ON) =130mΩ@VGS = -1.8V
- Super high density cell design for extremely low
- Exceptional on-resistance and maximum DC