1N5712
1N5712 is Small Signal Schottky Diodes manufactured by LGE.
Features
Metal-to-silicon junction High breakdown voltage Low turn-on voltage Ultrafast switching speed Prmarly intended for high level UHF/VHF detection and pulse applications with broad dynamic range
Mechanical Data
Case:JEDEC DO--35,glass case Polarity: Color band denotes cathode end Weight: Approx. 0.13 gram ABSOLUTE RATINGS(LIMITING VALUES)
Peak reverse voltage Pow er dissipation (Infinite Heat Sink) Forw ard continuous current Junction and storage temperature range Maximumlead temperature for soldering during 10S at 4mmfromcase
Small Signal Schottky Diodes VOLTAGE RANGE: 20 V
POWER DISSIPATION: 430 m W
- 35(GLASS)
Dimensions in millimeters
Symbols
VRRM Ptot IFSM TJ/TSTG TL
Value
20.0 430.0 35.0 c-55 ---+ 150 230
UNITS V m W m A
ELECTRICAL CHARACTERISTICS
Reverse breakdow n voltage @ IR=10 A
Leakage current
@ VR=16V
Forw ard voltage drop @ IF=1m A
Test pulse: tp 300 s <2% IF=35m A
Junction capacitance @ VR=0V,f=1MHz
Thermal resistance
Symbols
Min.
Typ.
Max....
