LGE BC338
TO-92 Bipolar Transistors
FEATURES
Power dissipationMAXIMUM RATINGS
(TA=25℃ unless otherwise noted) Symbol Parameter VCBO Collector-Base Voltage BC337 BC338 VCEO Collector-Emitter Voltage BC337 BC338 VEBO IC PD Emitter-Base Voltage Collector Current -Continuous Total Device Dissipation Tj Junction Temperature Tstg Storage Temperature Value 50 30 45 25 5 800 625 150 -55-150 Units V V V mA mW ℃ ℃ Dimensions in inches and (millimeters)ELECTRICAL CHARACTERISTICS
(Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage BC337 BC338 Collector-emitter breakdown voltage BC337 BC338 Emitter-base breakdown voltage Collector cut-off current BC337 BC338 Collector cut-off current BC337 BC338 Emitter cut-off current BC337/BC338 BC337-16/BC338-16 BC337-25/BC338-25 BC337-40/BC338-40 DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter v