LGE BC560
PNP Epitaxial Silicon Transistor
| Part No. | BC560 |
|---|---|
| Datasheet | BC560 Download |
| Manufacturer |  LGE |
| Description | PNP Epitaxial Silicon Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
Ta=25°C unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage : BC556 : BC557/560 : BC558/559 VCEO Collector-Emitter Voltage : BC556 : BC557/560 : BC558/559 VEBO IC PC TJ TSTG Emitter-Base Voltage Collector Current (DC) Collector Power Dissipation Junction Temperature Storage Temperature Value -80 -50 -30 -65 -45 -30 -5 -100 500 150 -65 ~ 150 Units V V V V V V V mA mW °C °CELECTRICAL CHARACTERISTICS
Ta=25°C unless otherwise noted Symbol Parameter Test Condition ICBO hFE VCE (sat) VBE (sat) VBE (on) fT Cob NF Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Collector-Base Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure :