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BC560 - LOW NOISE TRANSISTORS

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous @Total Device Dissipation Ta = 25°C Derate above 25°C @TcTotal Device Dissipation = 25°C Derate above 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient VCEO VCBO VEBO ic PD pd Tj, T stg Symbol R0JC RftJC BC BC 559 560 30 45 30 50 5.0 100 625 5.0 1.5 12 -55 to +150 Max 83.3 200 Unit Vdc Vdc Vdc mAdc mW mW/°C Watt mW/°C °C Unit °C/W °c/w BC559 BC560 CASE 29-02, STYLE 17 TO-92 (TO-226AA) LOW NOISE TRANSISTORS PNP SILICON ELECTRICAL CHARACTERISTICS (Ta = 25 °C unless otherwise noted) Characteristic Symbol | Min. | Typ. j Max.